Compared with traditional silicon devices, silicon carbide (SiC) devices have low conductivity characteristics and excellent high temperature, high frequency and high pressure performance, making them the most viable candidate for the next generation of low-loss semiconductors. In addition, SiC further reduces design complexity by enabling designers to reduce the use of components.

Rohm is a leader in the development of SiC power devices and modules that achieve higher energy efficiency in many industry applications.

Application of SiC technology:

1. Efficient inverters in solar and wind DC/AC converters

2. Power converters for electric and hybrid vehicles

3. Power inverter for industrial equipment and air-conditioning equipment

4. High voltage switch of X-ray generator

5. Coating process