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New 1700V SiC Power Module


  1. Achieves the highest level* of reliability in extreme environments

    New 1700V SiC Power Module

    *ROHM November 2018 study

    ROHM recently announced the development of a 1700V/250A rated SiC power module that provides the industry’s highest level of reliability optimized for inverter and converter applications such as outdoor power generation systems and industrial high power supplies

    In recent years, due to its energy-saving benefits, SiC is seeing greater adoption in 1200V applications such as electric vehicles and industrial equipment. The trend towards higher power density has resulted in higher system voltages, increasing the demand for 1700V products. However, it has been difficult to achieve the desired reliability, and so IGBTs are typically preferred for 1700V applications.

    In response, ROHM was able to reach high reliability at 1700V, while maintaining the energy-saving performance of its popular 1200V SiC products, achieving the world’s first successful commercialization of 1700V rated SiC power modules.

    The BSM250D17P2E004 utilizes new construction methods and coating materials to prevent dielectric breakdown and suppress increases in leakage current. As a result, high reliability is achieved that prevents dielectric breakdown even after 1,000 hours under high temperature high humidity bias testing (HV-H3TRB). This ensures high voltage (1700V) operation even under severe temperature and humidity environments.

    Key Features

    1. Achieves the highest level of reliability under high temperature and high humidity environments

    Leakage Current During High Temperature High Humidity Bias Testing

    This latest 1700V module introduces a new packaging method and coating materials to protect the chip, which allows achieving the first successful commercialization of a 1700V SiC Module, passing the HV-H3TRB reliability tests.

    For example, during high temperature high humidity testing the BSM250D17P2E004 exhibited superior reliability with no failures even when 1,360V is applied for more than 1,000 hours at 85°C and 85% humidity, unlike conventional IGBT modules which typically fail within 1,000 hours due to dielectric breakdown. To ensure highest level of reliability ROHM tested the leakage current of the modules at different intervals with the highest level of blocking voltage 1700V.

    2. Superior ON resistance contributes to greater energy savings

    ON Resistance Comparison

    Combining ROHM’s SiC Schottky barrier diodes and MOSFETs within the same module makes it possible to reduce ON resistance by 10% compared to other products in its class, contributing to improved energy savings.

    Part No. Absolute Maximum Ratings (Ta=25ºC) Inductance (nH) Package
    Thermistor Internal Circuit Diagram*
    VDSS (V) VGS (V)
    Tj max (ºC) Tstg (ºC)
    Visol (V)
    [AC 1min.]
    BSM080D12P2C008 1200 -6 to 22 80 175 -40 to 125 2500 25 C Type
    45.6 x 122 x 17
    NA Internal Circuit Diagram
    BSM120D12P2C005 120
    BSM180D12P3C007 -4 to 22 180
    BSM180D12P2E002 -6 to 22 180 13 E Type
    62 x 152 x 17
    YES Internal Circuit Diagram
    BSM300D12P2E001 300
    BSM400D12P3G002 -4 to 22 400 10 G Type
    62 x 152 x 17
    BSM600D12P3G001 600
    1700 -6 to 22 250 3400 13 E Type


    Leakage Current

    Refers to the small amount of current that leaks from the isolated block of a power device. Suppressing leakage current makes it possible to prevent device damage and increased power consumption.

    High Voltage High Humidity High Temperature Reverse Bias Test (HV-H3TRB)

    Testing to evaluate the durability of a power device when used under high temperature high humidity environments. Designed to detect failures such as dielectric breakdown from an increase in isolation leakage current due to electric field and moisture.

    Going forward, we will continue to expand our lineup and at the same time offer evaluation boards that allow easy testing and verification of our SiC modules.

    New 1700 SiC Power Module Supports 1000VDC Applications 

    By incorporating ROHM’s proven SiC MOSFETs and SiC Schottky barrier diodes into the same module and optimizing the internal structure make it possible to reduce ON resistance by 10% over other SiC products in its class. This translates to improved energy savings and reduced heat dissipation in any application.